Listar por autor "Grötzschel, Rainer"
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Competing influence of damage buildup and lattice vibrations on ion range profiles in Si
Posselt, Matthias; Mäder, M.; Grötzschel, Rainer; Behar, Moni (2003) [Artículo de periódico]Phosphorus depth profiles in Si obtained by 140 keV implantation in the [001] axial channel direction and in a direction 7° off axis are investigated at two different doses (531013 and 5 31015 cm22) for implantation ...