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    • Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region 

      Pitthan Filho, Eduardo; Lopes, L. D.; Palmieri, Rodrigo; Corrêa, Silma Alberton; Soares, Gabriel Vieira; Boudinov, Henri Ivanov; Stedile, Fernanda Chiarello (2013) [Journal article]
      In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were ...