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dc.contributor.authorMcDonald, K.pt_BR
dc.contributor.authorHuang, M.B.pt_BR
dc.contributor.authorWeller, R.A.pt_BR
dc.contributor.authorFeldman, L.C.pt_BR
dc.contributor.authorWilliams, J.R.pt_BR
dc.contributor.authorStedile, Fernanda Chiarellopt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorRadtke, Claudiopt_BR
dc.date.accessioned2016-05-14T02:08:03Zpt_BR
dc.date.issued2000pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141103pt_BR
dc.description.abstractThe nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ~1013 cm22 of N and annealing in NO incorporates ~1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ~0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal: a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 76, no. 5 (Jan. 2000), p. 568-570pt_BR
dc.rightsOpen Accessen
dc.subjectRecozimentopt_BR
dc.subjectInterdifusao quimicapt_BR
dc.subjectDopagem de semicondutorespt_BR
dc.subjectInterfaces semicondutor-isolantept_BR
dc.subjectTrocas químicaspt_BR
dc.subjectNitretaçãopt_BR
dc.subjectInterfacespt_BR
dc.subjectAnálise química nuclearpt_BR
dc.subjectFilmes finospt_BR
dc.subjectSilíciopt_BR
dc.subjectNitrogêniopt_BR
dc.subjectOxidaçãopt_BR
dc.titleComparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structurespt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000269708pt_BR
dc.type.originEstrangeiropt_BR


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