Ultrafast trapping times in ion implanted InP
dc.contributor.author | Carmody, Christine | pt_BR |
dc.contributor.author | Boudinov, Henri Ivanov | pt_BR |
dc.contributor.author | Tan, Hoe H. | pt_BR |
dc.contributor.author | Jagadish, Chenupati | pt_BR |
dc.contributor.author | Lederer, Max J. | pt_BR |
dc.contributor.author | Koley, Vesselin | pt_BR |
dc.contributor.author | Luther-Davies, B. | pt_BR |
dc.contributor.author | Dao, L.V. | pt_BR |
dc.contributor.author | Gal, Michael | pt_BR |
dc.date.accessioned | 2014-05-31T02:06:43Z | pt_BR |
dc.date.issued | 2002 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/95824 | pt_BR |
dc.description.abstract | As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1x1016 cm-² and p-type InP was implanted with doses between 1x1012 and 1x1016 cm-². Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of applied physics. Melville. Vol. 92, no. 5 (Sept. 2002), p. 2420-2423 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Mobilidade de portadores | pt_BR |
dc.subject | Resistividade elétrica | pt_BR |
dc.subject | Efeito hall | pt_BR |
dc.subject | Semicondutores iii-v | pt_BR |
dc.subject | Compostos de indio | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.subject | Recozimento térmico rápido | pt_BR |
dc.subject | Refletividade | pt_BR |
dc.subject | Espectros de evolução no tempo | pt_BR |
dc.subject | Difração de raios X | pt_BR |
dc.title | Ultrafast trapping times in ion implanted InP | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000334504 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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