Ultrafast trapping times in ion implanted InP
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Abstract
As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1x1016 cm-² and p-type InP was implanted with doses between 1x1012 and 1x1016 cm-². Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond di ...
As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1x1016 cm-² and p-type InP was implanted with doses between 1x1012 and 1x1016 cm-². Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity. ...
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Journal of applied physics. Melville. Vol. 92, no. 5 (Sept. 2002), p. 2420-2423
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Artigos de Periódicos (39401)Ciências Exatas e da Terra (5976)
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